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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1110 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *Good Linearity of hFE *Complement to Type 2SB849 APPLICATIONS *Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 120 V 120 V 5 V 7 A 12 A 80 W UNIT .cn mi e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1110 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V A ICBO Collector Cutoff Current VCB= 120V; IE= 0 50 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 A hFE-1 DC Current Gain IC= 50mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications S 40-80 R 60-120 w w Q 100-200 scs .i w IE= 0; VCB= 10V; ftest= 1.0MHz IC= 0.2A; VCE= 5V .cn mi e 40 200 190 pF 15 MHz isc Websitewww.iscsemi.cn 2 |
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